Magnetic-Field-Induced Localization Transition in HgCdTe
نویسندگان
چکیده
منابع مشابه
Magnetic-field-induced localization transition in HgCdTe.
We have performed magnetoresistance and Hall-resistance measurements on low —carrierconcentration n-type samples of Hg076Cdp24Te at millikelvin temperatures. We observe an abrupt rise in the Hall resistance and magnetoresistance at a characteristic field H, which is a significant function of temperature and which allows us to reject magnetic freezeout or localization by disorder as possible mec...
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ژورنال
عنوان ژورنال: Physical Review Letters
سال: 1985
ISSN: 0031-9007
DOI: 10.1103/physrevlett.54.241